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 FFPF08S60SN — STEALTH? II Diode www.fairchildsemi.com 2 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit VF1 IF = 8 A IF = 8 A TC = 25oC TC = 125oC - - 2.7 2.1 3.4 - V IR1 VR = 6 00 V VR = 600 V TC = 25oC TC = 125oC - - - - 100 500 μA trr IF = 1 A, diF/dt = 100 A/μs, VR = 30 V TC = 25oC-13-ns trr Irr S factor Qrr IF = 8 A, diF/dt = 200 A/μs, VR = 390 V TC = 25oC - - - - 15 2.5 0.4 19 25 - - - ns A nC trr Irr S factor Qrr IF = 8 A, diF/dt = 200 A/μs, VR = 390 V TC = 125oC - - - - 32 3.8 0.7 62 - - - - ns A nC WAVL Avalanche Energy ( L = 40 mH) 10 - - mJ Notes: 1: Pulse: Te st Pulse width = 300 μs, Duty Cycle = 2% ?2008 Fairchild Semiconductor Corporation FFPF08S60SN Rev. C1 Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform |